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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 26: Chip/Block Erase AC Timing (8-Bit Mode)
t WC
A[MAX:0]/
A–1
AAAh
555h
AAAh
AAAh
555h
AAAh
BAh 1
CE#
OE#
WE#
t CS
t GHWL
t WP
t DS
t AS
t CH
t AH
t WPH
DQ[7:0]
AAh
55h
80h
AAh
55h
10h/
30h
t DH
Notes:
1. For a CHIP ERASE command, the address is 555h, and the data is 10h; for a BLOCK ERASE
command, the address is BAd, and the data is 30h.
2. BAd is the block address.
3. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
68
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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